PT2313 4-Channel Audio Processor SMD IC
- 4-Channel Audio Processor IC
- CMOS Technology
- Least External Components
- Treble and Bass Control
- Loudness Function
- 3 Stereo Inputs with Selectable Input Gain
- Input/output for External Noise Reduction System/Equalizer
- 4 Independent Speaker Controls for Fader and Balance
- Independent Mute Function
- Volume Control in 1.25 dB/step
- Low Distortion
- Low Noise and DC Stepping
- Controlled by I2C Bus Micro-Processor Interface
- Pin-to-pin Compatible with TDA7313
- Package: SO-28
PT2399 Digital Delay Echo Audio Processor IC
74F244 Octal Buffer or Driver IC With 3-State Output
- Octal Buffer/Driver With 3-State Output
- Logic Family:Â F
- Logic Type:Â Bipolar
- No. of Channels per Chip:Â 8
- Polarity:Â Non-Inverting
- Propagation Delay Time:Â 5.2 ns at 5 V
- High Level Output Current:Â -15 mA
- Low Level Output Current:Â 64 mA
- No. of Pins:Â 20
- Operating Temperature Range: 0°C to +70°C
- Supply Voltage Range:Â 4.5V to 5.5V
- Package:Â DIP-20
9N80 N-Channel Power Mosfet Transistor 800V 9A
- N-Channel Power Mosfet
- Type Designator: 9N80
- Maximum Power Dissipation (Pd): 147W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 9 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 37 nS
- Drain-Source Capacitance (Cd): 195 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
- Power Dissipation: 49W
- Package: TO-220F
IRF3415 N-Channel Power Mosfet Transistor 150V 43A
IRF9640 P-Channel Power Mosfet Transistor -200V -11A
- P-Channel Power Mosfet
- Drain Current: ID= -11A at TC=25℃
- Drain Source Voltage: VDSÂ = -200V
- Static Drain-Source On-Resistance: RDS(on)=500mΩ
- Power Dissipation:Â 125W
- Package: TO-220AB
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available
Mosfet 105N03
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 140 W
- Maximum Drain-Source Voltage |Vds|: 30 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
- Maximum Drain Current |Id|: 150 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 42 nC
- Rise Time (tr): 91 nS
- Drain-Source Capacitance (Cd): 400 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
- Package:Â TO-220
15N120 IGBT 1200V 15A
- Collector-Emitter Voltage, VCES:Â 1200V
- Gate-Emitter Voltage, VGES: ±20V
- Collector Current ICÂ (@ TCÂ = 250C):Â 30A
- Saturation Voltage: VCE(sat), typ:Â 1.9 V
- Package:Â TO-3P
- 1200 V, 15 A NPT Trench IGBT
- NPT Trench Technology, Positive temperature coefficient
- Extremely Enhanced Avalanche Capability
- Low Saturation Voltage
2SK903 N-Channel Power Mosfet Transistor 800V 3A
Dean Connector
- Male plug size: About 13* 7* 19mm
- Female plug size: About 13* 7* 15mm
- Current Rating: 30Amps
- Colour: Red and golden
- Material: Plastic and metal
- Provides a secure connection for battery and motor connections
- Eliminates the possibility of wrong polarity connections
- Used in RC hobby, car, boat, plane, helicopter, LIPO battery, etc.
- Dimension: 9x0.7x2cm
- Weight:20gm
