Transistors
BF494 NPN Transistor 30V 0.03A
2N6288 NPN Transistor 40V 7A
2SC2625 NPN Transistor 450V 10A
BF495 NPN Transistor 30V 30mA
2N3055 NPN Power Transistor 100V 15A
2N3906 PNP Transistor 40V 0.2A
BEL 100P PNP Transistor 60V 1A
2N7000 N-Channel Mosfet Transistor 60V 200mA
2N2646 UJT
- Available as “HR” (high reliability)
- Available as non-RoHS (Sn/Pb plating)
- Low emitter reverse current: 0.005µA (Typ)
- PASSIVATED surface for reliability and uniformity
- Maximum voltage between two bases (VB2B1): 35V
- Maximum emitter reverse voltage (VB2E): 30V
- Maximum RMS emitter current (Ie): 50mA
- Maximum peak emitter current (Ie): 2A
- Operating temperature range: -65ºC to +150ºC
- Maximum power dissipation : 300mW
