5N90 N-Channel Mosfet Transistor 900V 3A
BC557 PNP Transistor -50V -100mA
BC559 PNP Transistor -30V -0.1A
BC636 PNP Transistor -45V -1A
BC558 PNP Transistor -30V -0.1A
BC548 NPN Transistor 30V 0.1A
BC547 NPN Transistor 50V 0.1A
BEL 100N NPN Transistor 60V 1A
MOQ: 2 nos
- Type Designator: BEL100N
- Material of Transistor: Si
- Polarity: NPNMaximum Collector Power Dissipation (Pc): 0.8 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 50 V
- Maximum Collector Current |Ic max|: 1 A
- Max. Operating Junction Temperature (Tj): 175 °C
- Forward Current Transfer Ratio (hFE), MIN: 50
- Package: TO39
BC639 NPN Transistor 80V 1A
MOQ: 2 nos
- Collector-base Voltage:Â 80V
- Collector Current:Â 1A
- Transistor Polarity:Â NPN
- Total Power Dissipation:Â 1W
- Transition Frequency:Â 200MHz
- Current Gain Min. :Â 40
- Package: T0-92
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
2N2222A NPN Metal Transistor 75V 0.8A
2N3866 NPN High Frequency Transistor 55V 0.4A
- Type Designator: 2N3866
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 5 W
- Maximum Collector-Base Voltage |Vcb|: 55 V
- Maximum Collector-Emitter Voltage |Vce|: 30
- Maximum Emitter-Base Voltage |Veb|: 3
- Maximum Collector Current |Ic max|: 0.4 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 500 MHz
- Collector Capacitance (Cc): 3 p
- Forward Current Transfer Ratio (hFE), MIN: 10
- Total Power Dissipation:Â 5W
- Transition Frequency:Â 500MHz
- Package:Â T0-39
