BC638 PNP Transistor -60V -0.5A
BC368 NPN Transistor 25V 2A
- Type -Â NPN
- Collector-Emitter Voltage:Â 20Â V
- Collector-Base Voltage: 25Â V
- Emitter-Base Voltage:Â 5Â V
- Collector Current:Â 2Â A
- Collector Dissipation -0.625Â W
- DC Current Gain (hfe) - 85 to 375
- Transition Frequency -Â 45Â MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package -Â TO-92
BC337 NPN Transistor 50V 0.5A
BC327 PNP Transistor -50V -800mA
- VCBO Collector-Base Voltage (IE=0) : -50 V
- VCEO Collector-Emitter Voltage (IB=0) : -45 V
- VEBO Emitter-Base Voltage (IC=0) : -5 V
- IC Collector Current : -0.5 A
- ICM Collector Peak Current : -1 A
- Ptot Total Dissipation at TC = 25oC : 625 mW
- Tstg Storage Temperature : -65 to 150 oC
- Tj Max. Operating Junction Temperature : 150 oC
- Rthj-amb Thermal Resistance Junction-Ambient Max : 200 oC/W
- Rthj-case Thermal Resistance Junction-Case Max : 83.3 oC/W
BC177 PNP Transistor 50V 0.1A
BC107 NPN Transistor 50V 0.1A
2SC5589 NPN Transistor 1500V 18A
- Type Designator: 2SC5589
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 200 W
- Maximum Collector-Base Voltage |Vcb|: 1500 V
- Maximum Collector-Emitter Voltage |Vce|: 750 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 18 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 2 MHz
- Collector Capacitance (Cc): 240 pF
- Forward Current Transfer Ratio (hFE), MIN: 5
- Package: 2-21F2A