60N10 N-Channel Mosfet Transistor 100V 60A
IRF730 N-Channel Power Mosfet Transistor 400V 5.5A
- N-Channel Power Mosfet
- Drain Source Voltage: 400V
- Drain Current: IDÂ = 5.5A at TCÂ = 25oC
- Static Drain-to-Source On-Resistance: RDS(on) = 1000 mΩ
- Qg Typical: 25.3Nc
- Package: TO-220AB
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Compliant to RoHS directive 2002/95/EC
IRF3205 N-Channel Power Mosfet Transistor 55V 98A
2SK3264 N-Channel Power Mosfet Transistor 800V 7A
4N60 N-Channel Mosfet Transistor 600V 2.6A
6N60C N-Channel Mosfet Transistor 600V 5.5A
BUZ91A N-Channel Mosfet Transistor 600V 8A
3N60 N-Channel Mosfet Transistor 600V 3A
- Type Designator: 8N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 75
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 3 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 30 nS
- Drain-Source Capacitance (Cd): 50 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
- Package: Â TO-220F
IRF830 N-Channel Power Mosfet Transistor 500V 4.5A
IRF3710 N-Channel Power Mosfet Transistor 100V 57A
IRF840 N-Channel Mosfet Transistor 500V 8A
IRFBC40 N-Channel Power Mosfet Transistor 600V 2A
- N-Channel Power Mosfet
- Drain Current: 2A
- Drain Source Voltage: 600V
- Static Drain-Source On-Resistance: <1.2Ω
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
- Total Power Dissipation: 125W
- Package: TO-220