9N60 N-Channel Mosfet Transistor 600V 9A
6NK90 N-Channel Power Mosfet Transistor 900V 5.8A
10N60C N-Channel Mosfet Transistor 600V 9.5A
2SK2996 N-Channel Mosfet Transistor 600V 10A
4N80 N-Channel Mosfet Transistor 800V 4A
- Designator: 4N80
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 106 W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 4 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 45 nS
- Drain-Source Capacitance (Cd): 75 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm
- Package: TO-220
9N80 N-Channel Power Mosfet Transistor 800V 9A
- N-Channel Power Mosfet
- Type Designator: 9N80
- Maximum Power Dissipation (Pd): 147W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 9 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 37 nS
- Drain-Source Capacitance (Cd): 195 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
- Power Dissipation: 49W
- Package: TO-220F
IRF3415 N-Channel Power Mosfet Transistor 150V 43A
10N80 N-Channel Mosfet Transistor 800V 10A
7N90 N-Channel Power Mosfet Transistor 900V 7A
8N60 N-Channel Power Mosfet Transistor 600V 7.5A
- N-Channel Power Mosfet
- Ultra low gate charge ( typical 28 nC )
- Low reverse transfer capacitance ( Crss = typical 12.0 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- Drain Current: ID= 7.5A at TC= 25℃
- Drain Source Voltage: VDSSÂ = 600V
- Static Drain-Source On-Resistance: RDS(on) < 1.2Ω
- Package: TO-220F
