2N7000 N-Channel Mosfet Transistor 60V 200mA
55NF06 N-Channel Power Mosfet Transistor 60V 55A
IRF630 N-Channel Power Mosfet Transistor 200V 9A
IRF634 N-Channel Mosfet Transistor 250V 8.1A
60NF06 N-Channel Power Mosfet Transistor 60V 60A
10N20 N-Channel Mosfet Transistor 200V 9.5A
2SK792 N-Channel Mosfet Transistor 900V 3A
90NF03L N-Channel Power Mosfet Transistor 30V 90A
- N-Channel Power Mosfet
- Typical RDS(on): 0.0056Ω
- Typical Qg: 35 nC at 5V
- Drain-source Voltage: VDSSÂ = 30 V
- Gate- source Voltage: VGS = ±20 V
- Drain Current: IDÂ = 90 A at TCÂ = 250C
- Pulsed drain current: 360A
- Total dissipation at 25℃: 150W
- Operating temperature: -65℃ to 175℃
- Package: TO-220
9D5N20 N-Channel Mosfet Transistor 200V 9.5A
IRF620 N-Channel Power Mosfet Transistor 200V 5.2A
IRF530 N-Channel Power Mosfet Transistor 100V 14A
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 90 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 16 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 26 nC
- Drain-Source Capacitance (Cd): 900 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
- Package: TO220
