IRFZ44N Power Mosfet Transistor 55V 49A
IRF630 N-Channel Power Mosfet Transistor 200V 9A
IRF830 N-Channel Power Mosfet Transistor 500V 4.5A
60NF06 N-Channel Power Mosfet Transistor 60V 60A
IRF540N Power Mosfet Transistor 100V 33A
- Drain Current: ID = 33A at TC = 250C and VGS = 10V
- Gate-to-Source Voltage: VGS = ± 20 V
- Static Drain-to-Source On-Resistance: RDS(on) = 44 mΩ
- VDSS: 100V
- Package: TO-220AB
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
IRFZ48N Power Mosfet Transistor 55V 64A
90NF03L N-Channel Power Mosfet Transistor 30V 90A
- N-Channel Power Mosfet
- Typical RDS(on): 0.0056Ω
- Typical Qg: 35 nC at 5V
- Drain-source Voltage: VDSSÂ = 30 V
- Gate- source Voltage: VGS = ±20 V
- Drain Current: IDÂ = 90 A at TCÂ = 250C
- Pulsed drain current: 360A
- Total dissipation at 25℃: 150W
- Operating temperature: -65℃ to 175℃
- Package: TO-220
IRF620 N-Channel Power Mosfet Transistor 200V 5.2A
IRF530 N-Channel Power Mosfet Transistor 100V 14A
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 90 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 16 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 26 nC
- Drain-Source Capacitance (Cd): 900 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
- Package: TO220
IRF9530 P-Channel Power Mosfet Transistor -100V -12A
IRF730 N-Channel Power Mosfet Transistor 400V 5.5A
- N-Channel Power Mosfet
- Drain Source Voltage: 400V
- Drain Current: IDÂ = 5.5A at TCÂ = 25oC
- Static Drain-to-Source On-Resistance: RDS(on) = 1000 mΩ
- Qg Typical: 25.3Nc
- Package: TO-220AB
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Compliant to RoHS directive 2002/95/EC
