IRFP064 N-Channel Power Mosfet Transistor 60V 70A
- N-Channel Power Mosfet
- Designator: IRFP064
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 70 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 190(max) nC
- Rise Time (tr): 190 nSDrain-Source
- Capacitance (Cd): 3200 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
- Drain Current: ID= 70A at TC=25℃
- Drain Source Voltage: VDSÂ = 60V
- Static Drain-Source On-Resistance: RDS(on)=9mΩ
- Power Dissipation: 300W
- Package: TO-247AC
IRFP054 N-Channel Power Mosfet Transistor 60V 70A
2SK1535 N-Channel Power Mosfet Transistor 900V 3A
70N10 N-Channel Power Mosfet Transistor 100V 65A
IRFP260N N-Channel Power Mosfet Transistor 200V 49A
IRFP9240 P-Channel Power Mosfet Transistor -200V -12A
- P-Channel Power Mosfet
- Drain Current: ID= -12A at TC=25℃
- Drain Source Voltage: VDSÂ = -200V
- Static Drain-Source On-Resistance: RDS(on) < 500mΩ
- Power Dissipation: 150W
- Package: TO-247AC
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available
G15N60 N-Channel Power Mosfet Transistor 600V 15A
- N-Channel Power Mosfet
- Type Designator: 15N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 312 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Drain Current |Id|: 15 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 200 nS
- Drain-Source Capacitance (Cd): 270 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
- Power Dissipation: 38.5W
- Package: TO-220