Showing 13–24 of 126 results

BD139 NPN Transistor 80V 1.5A

₹5.00 inc. GST
  • Collector-base Voltage: 80V
  • Collector Current: 1.5A
  • Transistor Polarity: NPN
  • Total Power Dissipation: 12.5W
  • Current Gain max. : 250
  • Package: T0-126

2N7000 N-Channel Mosfet Transistor 60V 200mA

₹10.00 inc. GST
  • Small signal N-Channel MOSFET
  • Drain-Source Voltage (VDS) is 60V
  • Continuous Drain Current (ID) is 200mA
  • Pulsed Drain Current (ID-peak) is 500mA
  • Gate threshold voltage (VGS-th) is 3V
  • Gate-Source Voltage is (VGS) is ±20V
  • Turn ON and Turn off time is 10ns each.
  • Available in To-92 Package

IRFP450 Power Mosfet Transistor 500V 14A

₹100.00 inc. GST
  • Drain Current: ID= 14A at TC=25℃
  • Drain Source Voltage: VDSS = 500V
  • Static Drain-Source On-Resistance: RDS(on) = 0.40 Ω
  • Power Dissipation: 190W
  • Package: TO-247AC
  • Power Mosfet
  • Dynamic dv/dt Rating
  • Fast Switching
  • Repetitive Avalanche Rated
 

6NK90 N-Channel Power Mosfet Transistor 900V 5.8A

₹48.00 inc. GST
  • N-Channel Power Mosfet
  • Drain Current: ID= 5.8A at TC= 25℃
  • Drain Source Voltage: VDSS = 900V
  • Static Drain-Source On Resistance: 2Ω
  • Total Power Dissipation: 30W
  • Package: TO-220FP

2N3055 NPN Power Transistor 100V 15A

₹35.00 inc. GST
  • Complementary Silicon NPN Power Transistor
  • Collector-base Voltage: 100V
  • Collector Current: 15A
  • Total Power Dissipation: 115W
  • Current Gain: 70
  • Transition Frequency: 2.5MHz
  • Package: T0-3

IRF530 N-Channel Power Mosfet Transistor 100V 14A

₹30.00 inc. GST
  • Type Designator: IRF530
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 90 W
  • Maximum Drain-Source Voltage |Vds|: 100 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 16 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 26 nC
  • Drain-Source Capacitance (Cd): 900 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
  • Package: TO220

IRFZ44N Power Mosfet Transistor 55V 49A

₹20.00 inc. GST
  • Power Mosfet
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Drain Current: ID= 49A at TC= 25℃
  • Drain Source Voltage: VDSS = 55V
  • Static Drain-Source On-Resistance: RDS(on) = 17.5m Ω
  • Power Dissipation: 94W
  • Package: TO-220AB

2SC2625 NPN Transistor 450V 10A

₹90.00 inc. GST
  • Collector-base Voltage: 450V
  • Collector Current: 10A
  • Transistor Polarity: NPN
  • Total Power Dissipation: 80W
  • Current Gain min. : 10
  • Package: T0-3P

IRF3205 N-Channel Power Mosfet Transistor 55V 98A

₹35.00 inc. GST
N-Channel Power Mosfet Drain Current: ID= 98A at TC= 25℃ Drain Source Voltage: VDS = 55V Static Drain-Source On-Resistance:  RDS(on) =8mΩ Power

IRFP9240 P-Channel Power Mosfet Transistor -200V -12A

₹120.00 inc. GST
  • P-Channel Power Mosfet
  • Drain Current: ID= -12A at TC=25℃
  • Drain Source Voltage: VDS = -200V
  • Static Drain-Source On-Resistance:  RDS(on) < 500mΩ
  • Power Dissipation: 150W
  • Package: TO-247AC
  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Isolated Central Mounting Hole
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Lead (Pb)-free Available

IRF3415 N-Channel Power Mosfet Transistor 150V 43A

₹55.00 inc. GST
FEATURES: N-Channel Power Mosfet Dynamic dv/dt Rating 1750C Operating Temperature Fast Switching SPECIFICATIONS: Drain Current: ID= 43A at TC=25℃ Drain

20N60 Mosfet Transistor Small 600V 20A

₹111.00 inc. GST
  • VDSS = 600 V
  • Best RDS(on) in TO 220, RDS(on) = 0.19 Ω
  • ID = 20A
  • Package: TO247
  • Ultra low gate charge
  • Improved periodic avalanche rating
  • Extreme dv/dt rated
  • Optimized capacitances
  • Improved noise immunity