2N60 N-Channel Mosfet Transistor 600V 2A

These N-Channel enhancement mode power field-effect transistors designed based on Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology specially tailored to attenuate on-state resistance, provide superior switching performance. And also feature fast switching time, low on-resistance, low gate charge. These devices are compatible for high-efficiency switching DC/DC converters, switch-mode power supplies, also active power supply correction, electronic lamp ballast based n half-bridge topology .2N60 manufactured in TO-220F package that is universally accepted for all commercial-industrial applications.

2N60 provides a Drain Source Voltage 600V at a drain current of 2A. These power MOSFET Transistors designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters.

A MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET defined as a type of MOSFET in which the channel of the MOSFET made up of a majority of electrons as current carriers. When the MOSFET activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor device in world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in  wide range of applications such as in low-voltage (less than 200V) switch.