IRFP260N N-Channel Power Mosfet Transistor 200V 49A
2N2646 UJT
- Available as “HR” (high reliability)
- Available as non-RoHS (Sn/Pb plating)
- Low emitter reverse current: 0.005µA (Typ)
- PASSIVATED surface for reliability and uniformity
- Maximum voltage between two bases (VB2B1): 35V
- Maximum emitter reverse voltage (VB2E): 30V
- Maximum RMS emitter current (Ie): 50mA
- Maximum peak emitter current (Ie): 2A
- Operating temperature range: -65ºC to +150ºC
- Maximum power dissipation : 300mW
2SK2233 N-Channel Mosfet Transistor 60V 45A
IR2111 Half-Bridge Driver IC
- Half-Bridge Driver
- High Side Floating Supply Voltage: 625V
- High Level Output Voltage Max.:100mV
- Low Level Output Voltage Max.: 100mV
- Logic 1 Input Bias Current Max.: 40µA
- Logic 0 Input Bias Current Max.: 1µA
- Total Power Dissipation:1W
- Rise Time Max. : 130ns
- Fall Time Max.: 65ns
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
- Internally set deadtime
- High side output in phase with input
- Package: DIP-8
74121 Monostable Multivibrator with Schmitt-Trigger Input
15N120 IGBT 1200V 15A
- Collector-Emitter Voltage, VCES: 1200V
- Gate-Emitter Voltage, VGES: ±20V
- Collector Current IC (@ TC = 250C): 30A
- Saturation Voltage: VCE(sat), typ: 1.9 V
- Package: TO-3P
- 1200 V, 15 A NPT Trench IGBT
- NPT Trench Technology, Positive temperature coefficient
- Extremely Enhanced Avalanche Capability
- Low Saturation Voltage
LM338K 5-Amp Adjustable Regulator IC
89C55 Atmel Microcontroller IC
- Core Processor: 8051
- Data Bus Width: 8 bit
- Maximum Clock Frequency: 33 MHz
- Program Memory Size: 20 KB
- Program Memory Type: Flash
- RAM Size: 256 B
- ADC: No
- Number of Programmable I/Os: 32
- Number of Timers: 3x16 bit
- Supply Voltage Range: 4 V to 5.5 V
- Package: PDIP-40
- Compatible with MCS-51™ Products
- 20K Bytes of In-System Reprogrammable Flash Memory – Endurance: 1,000 Write/Erase Cycles
- Fully Static Operation: 0 Hz to 33 MHz
- Three-Level Program Memory Lock
- 256 x 8-bit Internal RAM
- 32 Programmable I/O Lines
- Three 16-bit Timer/Counters
- Eight Interrupt Sources
- Low Power Idle and Power Down Modes
TOP247YN Off-line Switcher IC
Mosfet 10N90 Big
- Type Designator: 10N90
- Type of Transistor: MOSFET(Big)
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 183 W
- Maximum Drain-Source Voltage |Vds|: 900 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 10 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 54 nS
- Drain-Source Capacitance (Cd): 245 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.15 Ohm
- Package: TO-247 TO-3P
IRFP9240 P-Channel Power Mosfet Transistor -200V -12A
- P-Channel Power Mosfet
- Drain Current: ID= -12A at TC=25℃
- Drain Source Voltage: VDS = -200V
- Static Drain-Source On-Resistance: RDS(on) < 500mΩ
- Power Dissipation: 150W
- Package: TO-247AC
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available