IRFP250N Power Mosfet Transistor 200V 30A
2SK793 N-Channel Mosfet Transistor 850V 5A
- N-Channel Mosfet
- Drain Current: 5A
- Drain Source Voltage: Â 850V
- Static Drain-Source On Resistance: <2.5Ω
- Total Power Dissipation: 150W
- Maximum Power Dissipation (Pd): 150
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 110 nS
- Drain-Source Capacitance (Cd): 190 pF
- Package: Â TO3P
2SK956 N-Channel Power Mo9Asfet Transistor 800V
11N80 Mosfet 800V 11A
IRFP450 Power Mosfet Transistor 500V 14A
2SK2611 N-Channel Mosfet Transistor 900V 9A
IRFP460 Power Mosfet Transistor 500V 20A
2SK954 N-Channel Power Mosfet Transistor 800V 3A
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 100 W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 3 A
- Maximum Junction Temperature (Tj): 150 °C
- Turn-on Time (ton): 60 nS
- Drain-Source Capacitance (Cd): 90 p
- Maximum Drain-Source On-State Resistance (Rds): 4 Ohm
- Package:Â TO3P
G15N60 N-Channel Power Mosfet Transistor 600V 15A
- N-Channel Power Mosfet
- Type Designator: 15N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 312 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Drain Current |Id|: 15 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 200 nS
- Drain-Source Capacitance (Cd): 270 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
- Power Dissipation: 38.5W
- Package: TO-220
