FS10KM Power Mosfet 60V 10A
Mosfet 11N60 Small
- Type Designator: 11N60
- Type of Transistor: MOSFET(Big)
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage |Vds|: 650 V
- Maximum Drain Current |Id|: 11 A
- Maximum Junction Temperature (Tj): 150 °C
- Extremely low gate charge (often Qg=40nC)
- A low effective output capacitance (typical Coss.eff=95pF)
Mosfet 12N60
- 12N60 is the type designation.
- MOSFET is the transistor type used in the 12N60.
- N-Channel is the type of control channel.
- W: 225 Maximum power dissipation (Pd)
- |Uds| maximum drain-source voltage, V: 600
- Maximum drain current |Id|, A: 12 Maximum gate-source voltage |Ugs|, V: 30
- Maximum junction temperature (Tj), in degrees Celsius: 150
- 12N60 transistor rise time (tr), nS: 115
- Capacitance at the drain (Cd), pF: 200
- Maximum on-state drain-source resistance (Rds), Ohm: 0.6
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7N90 N-Channel Power Mosfet Transistor 900V 7A
8N60 N-Channel Power Mosfet Transistor 600V 7.5A
- N-Channel Power Mosfet
- Ultra low gate charge ( typical 28 nC )
- Low reverse transfer capacitance ( Crss = typical 12.0 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- Drain Current: ID= 7.5A at TC= 25℃
- Drain Source Voltage: VDSSÂ = 600V
- Static Drain-Source On-Resistance: RDS(on) < 1.2Ω
- Package: TO-220F
