Mosfet 108N03
Mosfet 10N90
Mosfet 10N90 Big
- Type Designator: 10N90
- Type of Transistor: MOSFET(Big)
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 183 W
- Maximum Drain-Source Voltage |Vds|: 900 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 10 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 54 nS
- Drain-Source Capacitance (Cd): 245 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.15 Ohm
- Package: TO-247 TO-3P
Mosfet 11N60 Small
- Type Designator: 11N60
- Type of Transistor: MOSFET(Big)
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage |Vds|: 650 V
- Maximum Drain Current |Id|: 11 A
- Maximum Junction Temperature (Tj): 150 °C
- Extremely low gate charge (often Qg=40nC)
- A low effective output capacitance (typical Coss.eff=95pF)
Mosfet 12N60
- 12N60 is the type designation.
- MOSFET is the transistor type used in the 12N60.
- N-Channel is the type of control channel.
- W: 225 Maximum power dissipation (Pd)
- |Uds| maximum drain-source voltage, V: 600
- Maximum drain current |Id|, A: 12 Maximum gate-source voltage |Ugs|, V: 30
- Maximum junction temperature (Tj), in degrees Celsius: 150
- 12N60 transistor rise time (tr), nS: 115
- Capacitance at the drain (Cd), pF: 200
- Maximum on-state drain-source resistance (Rds), Ohm: 0.6
Mosfet 15R1203
- Function : 1200V, 15A
- Reverse conducting IGBT / Reverse conducting IGBT
- Package: TO-247-3 Type
- Powerful monolithic body diode with a low forward voltage
- Designed for soft commutation only
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat
- easy parallel switching capability due to positive
- temperature coefficient in VCEsat
- Low EMI
Motor Driver IC – L293D
- Can be used to run Two DC motors with the same IC.
- Speed and Direction control is possible
- Motor voltage Vcc2 (Vs): 4.5V to 36V
- Maximum Peak motor current: 1.2A
- Maximum Continuous Motor Current: 600mA
- Supply Voltage to Vcc1(vss): 4.5V to 7V
- Transition time: 300ns (at 5Vand 24V)
- Automatic Thermal shutdown is available
- Available in 16-pin DIP, TSSOP, SOIC packages
- Featuring Unit rode L293 and L293D
- Wide Supply-Voltage Range: 4.5 V to 36 V
- Separate Input-Logic Supply
- Internal ESD Protection
- Thermal Shutdown
- High-Noise-Immunity Inputs
- Output Current 1 A Per Channel (600 mA for L293D)
- Peak Output Current 2 A Per Channel (1.2 A for L293D)
- Output Clamp Diodes for Inductive Transient Suppression
MUR1560 Dual diode
- Peak Repetitive Reverse Voltage VRRMÂ = 600V
- Average Rectified Forward Current at TC = 145°C, IF(AV): 15A
- Maximum Instantaneous Forward Voltage at iF = 15 Amps, TC = 25°C, VF: 1.5VPower pack
- Guarding for overvoltage protection
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max., 10 s, per JESD 22-B106
MUR460 Power Rectifier
- Peak Repetitive Reverse Voltage: 600V
- Average Rectified Forward Current: 4A
- Non Repetitive Peak Surge Current: 110A
- Maximum Reverse Recovery Time: 75ns
- Maximum Forward Recovery Time: 50ns
- Ultrafast 25 ns, 50 ns and 75 ns Recovery Times
- 175°C Operating Junction Temperature
- Low Forward Voltage
- Low Leakage Current
- High Temperature Glass Passivated Junction
- These are Pb−Free Packages*
