20N60 Mosfet Transistor Small 600V 20A
2N2219 NPN Switching Transistor 60V 0.8A
2N2222A NPN Plastic Transistor 75V 0.6A
2N2646 UJT
- Available as “HR” (high reliability)
- Available as non-RoHS (Sn/Pb plating)
- Low emitter reverse current: 0.005µA (Typ)
- PASSIVATED surface for reliability and uniformity
- Maximum voltage between two bases (VB2B1): 35V
- Maximum emitter reverse voltage (VB2E): 30V
- Maximum RMS emitter current (Ie): 50mA
- Maximum peak emitter current (Ie): 2A
- Operating temperature range: -65ºC to +150ºC
- Maximum power dissipation : 300mW
2N2904A PNP Transistor 60V 0.6A
2N3055 NPN Power Transistor 100V 15A
2N3773 NPN Power Transistor 160V 16A
2N3866 NPN High Frequency Transistor 55V 0.4A
- Type Designator: 2N3866
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 5 W
- Maximum Collector-Base Voltage |Vcb|: 55 V
- Maximum Collector-Emitter Voltage |Vce|: 30
- Maximum Emitter-Base Voltage |Veb|: 3
- Maximum Collector Current |Ic max|: 0.4 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 500 MHz
- Collector Capacitance (Cc): 3 p
- Forward Current Transfer Ratio (hFE), MIN: 10
- Total Power Dissipation: 5W
- Transition Frequency: 500MHz
- Package: T0-39
2N3904 NPN Transistor 60V 0.2A
2N3906 PNP Transistor 40V 0.2A
2N5298 NPN Transistor 80V 4A
- Collector-base Voltage: 80V
- Collector Current: 4A
- Transistor Polarity: NPN
- Total Power Dissipation: 36W
- Current Gain min.: 20
- Transition Frequency: 800kHz
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
- Package: T0-220