5N90 N-Channel Mosfet Transistor 900V 3A
BC557 PNP Transistor -50V -100mA
BC559 PNP Transistor -30V -0.1A
BC636 PNP Transistor -45V -1A
BC558 PNP Transistor -30V -0.1A
BC548 NPN Transistor 30V 0.1A
BC547 NPN Transistor 50V 0.1A
BEL 100N NPN Transistor 60V 1A
MOQ: 2 nos
- Type Designator: BEL100N
- Material of Transistor: Si
- Polarity: NPNMaximum Collector Power Dissipation (Pc): 0.8 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 50 V
- Maximum Collector Current |Ic max|: 1 A
- Max. Operating Junction Temperature (Tj): 175 °C
- Forward Current Transfer Ratio (hFE), MIN: 50
- Package: TO39
BC639 NPN Transistor 80V 1A
MOQ: 2 nos
- Collector-base Voltage:Â 80V
- Collector Current:Â 1A
- Transistor Polarity:Â NPN
- Total Power Dissipation:Â 1W
- Transition Frequency:Â 200MHz
- Current Gain Min. :Â 40
- Package: T0-92
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
2N3866 NPN High Frequency Transistor 55V 0.4A
- Type Designator: 2N3866
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 5 W
- Maximum Collector-Base Voltage |Vcb|: 55 V
- Maximum Collector-Emitter Voltage |Vce|: 30
- Maximum Emitter-Base Voltage |Veb|: 3
- Maximum Collector Current |Ic max|: 0.4 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 500 MHz
- Collector Capacitance (Cc): 3 p
- Forward Current Transfer Ratio (hFE), MIN: 10
- Total Power Dissipation:Â 5W
- Transition Frequency:Â 500MHz
- Package:Â T0-39
2N3906 PNP Transistor 40V 0.2A
2N6288 NPN Transistor 40V 7A
BC109 NPN Transistor 30V 0.1A
- Model: BC109
- Type: bipolar
- Polarity: NPN
- Operating frequency: 100 MHz
- Collector-emitter voltage max: 20 V
- Emitter-base voltage max: 5 V
- Collector-base voltage max: 30 V
- Continuous collector current: 0.1 A
- Collector cut-off current: 15 nA
- Power: 0.3 W
- Maximum operating temperature: 150°C
- Case: TO-18
- Mounting: THT, PCB
BC546 NPN Transistor 80V 0.1A
2N5298 NPN Transistor 80V 4A
- Collector-base Voltage:Â 80V
- Collector Current:Â 4A
- Transistor Polarity:Â NPN
- Total Power Dissipation:Â 36W
- Current Gain min.:Â 20
- Transition Frequency: 800kHz
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
- Package:Â T0-220
BF494 NPN Transistor 30V 0.03A
BF495 NPN Transistor 30V 30mA
BEL 100P PNP Transistor 60V 1A
BF421 PNP Transistor -300V -500mA
BD677 NPN Transistor 60V 4A
BD139 NPN Transistor 80V 1.5A
BD136 PNP Transistor -45V -1.5A
BD135 NPN Transistor 45V 1.5A
BC638 PNP Transistor -60V -0.5A
BC368 NPN Transistor 25V 2A
- Type -Â NPN
- Collector-Emitter Voltage:Â 20Â V
- Collector-Base Voltage: 25Â V
- Emitter-Base Voltage:Â 5Â V
- Collector Current:Â 2Â A
- Collector Dissipation -0.625Â W
- DC Current Gain (hfe) - 85 to 375
- Transition Frequency -Â 45Â MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package -Â TO-92
BC337 NPN Transistor 50V 0.5A
BC327 PNP Transistor -50V -800mA
- VCBO Collector-Base Voltage (IE=0) : -50 V
- VCEO Collector-Emitter Voltage (IB=0) : -45 V
- VEBO Emitter-Base Voltage (IC=0) : -5 V
- IC Collector Current : -0.5 A
- ICM Collector Peak Current : -1 A
- Ptot Total Dissipation at TC = 25oC : 625 mW
- Tstg Storage Temperature : -65 to 150 oC
- Tj Max. Operating Junction Temperature : 150 oC
- Rthj-amb Thermal Resistance Junction-Ambient Max : 200 oC/W
- Rthj-case Thermal Resistance Junction-Case Max : 83.3 oC/W
BC177 PNP Transistor 50V 0.1A
BC107 NPN Transistor 50V 0.1A
2SC5589 NPN Transistor 1500V 18A
- Type Designator: 2SC5589
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 200 W
- Maximum Collector-Base Voltage |Vcb|: 1500 V
- Maximum Collector-Emitter Voltage |Vce|: 750 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 18 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 2 MHz
- Collector Capacitance (Cc): 240 pF
- Forward Current Transfer Ratio (hFE), MIN: 5
- Package: 2-21F2A