5N90 N-Channel Mosfet Transistor 900V 3A
IRF9640 P-Channel Power Mosfet Transistor -200V -11A
- P-Channel Power Mosfet
- Drain Current: ID= -11A at TC=25℃
- Drain Source Voltage: VDSÂ = -200V
- Static Drain-Source On-Resistance: RDS(on)=500mΩ
- Power Dissipation:Â 125W
- Package: TO-220AB
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available
IRF840 N-Channel Mosfet Transistor 500V 8A
IRF740 Power Mosfet Transistor 400V 10A
IRFP9240 P-Channel Power Mosfet Transistor -200V -12A
- P-Channel Power Mosfet
- Drain Current: ID= -12A at TC=25℃
- Drain Source Voltage: VDSÂ = -200V
- Static Drain-Source On-Resistance: RDS(on) < 500mΩ
- Power Dissipation: 150W
- Package: TO-247AC
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available
BC557 PNP Transistor -50V -100mA
IRFP460 Power Mosfet Transistor 500V 20A
IRFP150 Power Mosfet Transistor 100V 41A
BC559 PNP Transistor -30V -0.1A
BC636 PNP Transistor -45V -1A
BC558 PNP Transistor -30V -0.1A
BC548 NPN Transistor 30V 0.1A
BC547 NPN Transistor 50V 0.1A
BEL 100N NPN Transistor 60V 1A
MOQ: 2 nos
- Type Designator: BEL100N
- Material of Transistor: Si
- Polarity: NPNMaximum Collector Power Dissipation (Pc): 0.8 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 50 V
- Maximum Collector Current |Ic max|: 1 A
- Max. Operating Junction Temperature (Tj): 175 °C
- Forward Current Transfer Ratio (hFE), MIN: 50
- Package: TO39
BC639 NPN Transistor 80V 1A
MOQ: 2 nos
- Collector-base Voltage:Â 80V
- Collector Current:Â 1A
- Transistor Polarity:Â NPN
- Total Power Dissipation:Â 1W
- Transition Frequency:Â 200MHz
- Current Gain Min. :Â 40
- Package: T0-92
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
IRF9530 P-Channel Power Mosfet Transistor -100V -12A
IRF9540N Power Mosfet Transistor -100V -23A
IRFBC40 N-Channel Power Mosfet Transistor 600V 2A
- N-Channel Power Mosfet
- Drain Current: 2A
- Drain Source Voltage: 600V
- Static Drain-Source On-Resistance: <1.2Ω
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
- Total Power Dissipation: 125W
- Package: TO-220
IRFP064 N-Channel Power Mosfet Transistor 60V 70A
- N-Channel Power Mosfet
- Designator: IRFP064
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 70 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 190(max) nC
- Rise Time (tr): 190 nSDrain-Source
- Capacitance (Cd): 3200 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
- Drain Current: ID= 70A at TC=25℃
- Drain Source Voltage: VDSÂ = 60V
- Static Drain-Source On-Resistance: RDS(on)=9mΩ
- Power Dissipation: 300W
- Package: TO-247AC
2N3906 PNP Transistor 40V 0.2A
2N6288 NPN Transistor 40V 7A
BC109 NPN Transistor 30V 0.1A
- Model: BC109
- Type: bipolar
- Polarity: NPN
- Operating frequency: 100 MHz
- Collector-emitter voltage max: 20 V
- Emitter-base voltage max: 5 V
- Collector-base voltage max: 30 V
- Continuous collector current: 0.1 A
- Collector cut-off current: 15 nA
- Power: 0.3 W
- Maximum operating temperature: 150°C
- Case: TO-18
- Mounting: THT, PCB
BC546 NPN Transistor 80V 0.1A
IRF3205 N-Channel Power Mosfet Transistor 55V 98A
IRF3415 N-Channel Power Mosfet Transistor 150V 43A
IRF3710 N-Channel Power Mosfet Transistor 100V 57A
IRF530 N-Channel Power Mosfet Transistor 100V 14A
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 90 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 16 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 26 nC
- Drain-Source Capacitance (Cd): 900 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
- Package: TO220
IRF620 N-Channel Power Mosfet Transistor 200V 5.2A
IRF630 N-Channel Power Mosfet Transistor 200V 9A
IRF634 N-Channel Mosfet Transistor 250V 8.1A
IRF830 N-Channel Power Mosfet Transistor 500V 4.5A
IRF1010E N-Channel Power Mosfet Transistor 60V 81A
- Type Designator: IRF1010E
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 170 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 10 V
- Maximum Drain Current |Id|: 81 A
- Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 130 nC
- Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
- Power Dissipation: 170W
- Package: TO-220AB
G15N60 N-Channel Power Mosfet Transistor 600V 15A
- N-Channel Power Mosfet
- Type Designator: 15N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 312 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Drain Current |Id|: 15 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 200 nS
- Drain-Source Capacitance (Cd): 270 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
- Power Dissipation: 38.5W
- Package: TO-220
9N80 N-Channel Power Mosfet Transistor 800V 9A
- N-Channel Power Mosfet
- Type Designator: 9N80
- Maximum Power Dissipation (Pd): 147W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 9 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 37 nS
- Drain-Source Capacitance (Cd): 195 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
- Power Dissipation: 49W
- Package: TO-220F
90NF03L N-Channel Power Mosfet Transistor 30V 90A
- N-Channel Power Mosfet
- Typical RDS(on): 0.0056Ω
- Typical Qg: 35 nC at 5V
- Drain-source Voltage: VDSSÂ = 30 V
- Gate- source Voltage: VGS = ±20 V
- Drain Current: IDÂ = 90 A at TCÂ = 250C
- Pulsed drain current: 360A
- Total dissipation at 25℃: 150W
- Operating temperature: -65℃ to 175℃
- Package: TO-220
