8N60 N-Channel Power Mosfet Transistor 600V 7.5A
- N-Channel Power Mosfet
- Ultra low gate charge ( typical 28 nC )
- Low reverse transfer capacitance ( Crss = typical 12.0 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- Drain Current: ID= 7.5A at TC= 25℃
- Drain Source Voltage: VDSSÂ = 600V
- Static Drain-Source On-Resistance: RDS(on) < 1.2Ω
- Package: TO-220F
90NF03L N-Channel Power Mosfet Transistor 30V 90A
- N-Channel Power Mosfet
- Typical RDS(on): 0.0056Ω
- Typical Qg: 35 nC at 5V
- Drain-source Voltage: VDSSÂ = 30 V
- Gate- source Voltage: VGS = ±20 V
- Drain Current: IDÂ = 90 A at TCÂ = 250C
- Pulsed drain current: 360A
- Total dissipation at 25℃: 150W
- Operating temperature: -65℃ to 175℃
- Package: TO-220
9N60 N-Channel Mosfet Transistor 600V 9A
9N80 N-Channel Power Mosfet Transistor 800V 9A
- N-Channel Power Mosfet
- Type Designator: 9N80
- Maximum Power Dissipation (Pd): 147W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 9 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 37 nS
- Drain-Source Capacitance (Cd): 195 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
- Power Dissipation: 49W
- Package: TO-220F
BC107 NPN Transistor 50V 0.1A
BC108 NPN Transistor 30V 0.1A
BC109 NPN Transistor 30V 0.1A
- Model: BC109
- Type: bipolar
- Polarity: NPN
- Operating frequency: 100 MHz
- Collector-emitter voltage max: 20 V
- Emitter-base voltage max: 5 V
- Collector-base voltage max: 30 V
- Continuous collector current: 0.1 A
- Collector cut-off current: 15 nA
- Power: 0.3 W
- Maximum operating temperature: 150°C
- Case: TO-18
- Mounting: THT, PCB
BC177 PNP Transistor 50V 0.1A
BC327 PNP Transistor -50V -800mA
- VCBO Collector-Base Voltage (IE=0) : -50 V
- VCEO Collector-Emitter Voltage (IB=0) : -45 V
- VEBO Emitter-Base Voltage (IC=0) : -5 V
- IC Collector Current : -0.5 A
- ICM Collector Peak Current : -1 A
- Ptot Total Dissipation at TC = 25oC : 625 mW
- Tstg Storage Temperature : -65 to 150 oC
- Tj Max. Operating Junction Temperature : 150 oC
- Rthj-amb Thermal Resistance Junction-Ambient Max : 200 oC/W
- Rthj-case Thermal Resistance Junction-Case Max : 83.3 oC/W
BC337 NPN Transistor 50V 0.5A
BC368 NPN Transistor 25V 2A
- Type -Â NPN
- Collector-Emitter Voltage:Â 20Â V
- Collector-Base Voltage: 25Â V
- Emitter-Base Voltage:Â 5Â V
- Collector Current:Â 2Â A
- Collector Dissipation -0.625Â W
- DC Current Gain (hfe) - 85 to 375
- Transition Frequency -Â 45Â MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package -Â TO-92
