BD240C PNP Transistor -100V -2A
BD244C PNP Transistor -100V -6A
BD677 NPN Transistor 60V 4A
BD678 PNP Transistor 60V 4A
BEL 100N NPN Transistor 60V 1A
MOQ: 2 nos
- Type Designator: BEL100N
- Material of Transistor: Si
- Polarity: NPNMaximum Collector Power Dissipation (Pc): 0.8 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 50 V
- Maximum Collector Current |Ic max|: 1 A
- Max. Operating Junction Temperature (Tj): 175 °C
- Forward Current Transfer Ratio (hFE), MIN: 50
- Package: TO39
BEL 100P PNP Transistor 60V 1A
BF421 PNP Transistor -300V -500mA
BF494 NPN Transistor 30V 0.03A
BF495 NPN Transistor 30V 30mA
BUZ91A N-Channel Mosfet Transistor 600V 8A
G15N60 N-Channel Power Mosfet Transistor 600V 15A
- N-Channel Power Mosfet
- Type Designator: 15N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 312 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Drain Current |Id|: 15 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 200 nS
- Drain-Source Capacitance (Cd): 270 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
- Power Dissipation: 38.5W
- Package: TO-220
IRF1010E N-Channel Power Mosfet Transistor 60V 81A
- Type Designator: IRF1010E
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 170 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 10 V
- Maximum Drain Current |Id|: 81 A
- Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 130 nC
- Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
- Power Dissipation: 170W
- Package: TO-220AB