IR LED Sensor
- Size: 5mm LED
- Wavelength: 940nm wavelength (most commonly used)
- Forward current (IF) is 100mA (normal condition) and 300mA (max.)
- 5A of surge forward current
- 24v to 1.4v of forward voltage
- Temperature : -40 to 100 ℃
- Soldering Temperature should not exceed 260 ℃
- Power Dissipation of 150mW at 25℃ (free-air temperature) or below
- Spectral bandwidth of 45nm
- Viewing angle: 30 to 40 degree
- High Reliability
- Excessive radiant intensity
- Having lead spacing of 2.54mm
- Easy to use with breadboard or perf board
IR2111 Half-Bridge Driver IC
- Half-Bridge Driver
- High Side Floating Supply Voltage: 625V
- High Level Output Voltage Max.:100mV
- Low Level Output Voltage Max.: 100mV
- Logic 1 Input Bias Current Max.: 40µA
- Logic 0 Input Bias Current Max.: 1µA
- Total Power Dissipation:1W
- Rise Time Max. : 130ns
- Fall Time Max.: 65ns
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
- Internally set deadtime
- High side output in phase with input
- Package: DIP-8
IR2153 Self-Oscillating Half-Bridge Driver IC
- Self-Oscillating Half-Bridge Driver
- High Side Floating Supply Voltage Max.: 625V
- Supply current Max.: 5mA
- Clamp Voltage Max.: 16.8V
- High level output voltage Max.: 100mV
- Low level output voltage Max.: 100mV
- Total Power Dissipation: 1W
- Oscillator frequency Max.: 106kHz
- Rise Time Max. : 150ns
- Fall Time Max.: 100ns
- Integrated 600V half-bridge gate driver
- 15.6V zener clamp on Vcc • True micropower start up
- Tighter initial deadtime control
- Low temperature coefficient deadtime
- Shutdown feature (1/6th Vcc) on CT pin
- Increased undervoltage lockout Hysteresis (1V)
- Lower power level-shifting circuit
- Constant LO, HO pulse widths at startup
- Lower di/dt gate driver for better noise immunity
- Low side output in phase with RT
- Internal 50nsec (typ.) bootstrap diode (IR2153D)
- Excellent latch immunity on all inputs and outputs
- ESD protection on all leads
- Also available LEAD-FREE
- Package: DIP-8
IR2155 Self-Oscillating Half-Bridge Driver IC
- Self-Oscillating Half-Bridge Driver
- High Side Floating Supply Voltage Max.: 625V
- Supply current Max.: 5mA
- Clamp Voltage Max.: 16.8V
- High level output voltage Max.: 100mV
- Low level output voltage Max.: 100mV
- Total Power Dissipation: 1W
- Oscillator frequency Max.: 106kHz
- Rise Time Max.: 120ns
- Fall Time Max.: 70ns
- Package: DIP-8
IRF3205 N-Channel Power Mosfet Transistor 55V 98A
IRF3415 N-Channel Power Mosfet Transistor 150V 43A
IRF3710 N-Channel Power Mosfet Transistor 100V 57A
IRF530 N-Channel Power Mosfet Transistor 100V 14A
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 90 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 16 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 26 nC
- Drain-Source Capacitance (Cd): 900 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
- Package: TO220
IRF540N Power Mosfet Transistor 100V 33A
- Drain Current: ID = 33A at TC = 250C and VGS = 10V
- Gate-to-Source Voltage: VGS = ± 20 V
- Static Drain-to-Source On-Resistance: RDS(on) = 44 mΩ
- VDSS: 100V
- Package: TO-220AB
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free