IR LED Sensor

Original price was: ₹20.00.Current price is: ₹12.00. inc. GST
  • Size: 5mm LED
  • Wavelength: 940nm wavelength (most commonly used)
  • Forward current (IF) is 100mA (normal condition) and 300mA (max.)
  • 5A of surge forward current
  • 24v to 1.4v of forward voltage
  • Temperature : -40 to 100 ℃
  • Soldering Temperature should not exceed 260 ℃
  • Power Dissipation of 150mW at 25℃ (free-air temperature) or below
  • Spectral bandwidth of 45nm
  • Viewing angle: 30 to 40 degree
  • High Reliability
  • Excessive radiant intensity
  • Having lead spacing of 2.54mm
  • Easy to use with breadboard or perf board

IR Receiver 3 Leg Black Metal

Original price was: ₹20.00.Current price is: ₹15.00. inc. GST
  • Sensing distance: 45m
  • Supply voltage: 2.5V- 5.5V
  • Mounting type: through hole
  • Operating temperature: -25°C ~ 85°C (TA)
  • Directivity: 45°
  • Supply Current: 350µA
  • Power Dissipation: 10 mW
  • Proper Shielding Against EMI
  • Comes with metal legs
  • High Immunity against Ambient Light
  • Photo Detector and Preamplifier in single Package
  • Low Supply Current
  • Insensitive to Noise and Supply Voltage Ripple

IR2111 Half-Bridge Driver IC

Original price was: ₹145.00.Current price is: ₹130.00. inc. GST
  • Half-Bridge Driver
  • High Side Floating Supply Voltage: 625V
  • High Level Output Voltage Max.:100mV
  • Low Level Output Voltage Max.: 100mV
  • Logic 1 Input Bias Current Max.: 40µA
  • Logic 0 Input Bias Current Max.: 1µA
  • Total Power Dissipation:1W
  • Rise Time Max. : 130ns
  • Fall Time Max.: 65ns
  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage
  • dV/dt immune
  • Gate drive supply range from 10 to 20 V
  • Undervoltage lockout for both channels
  • CMOS Schmitt-triggered inputs with pull-down
  • Matched propagation delay for both channels
  • Internally set deadtime
  • High side output in phase with input
  • Package: DIP-8

IR2153 Self-Oscillating Half-Bridge Driver IC

Original price was: ₹150.00.Current price is: ₹90.00. inc. GST
  • Self-Oscillating Half-Bridge Driver
  • High Side Floating Supply Voltage Max.: 625V
  • Supply current Max.: 5mA
  • Clamp Voltage Max.: 16.8V
  • High level output voltage Max.: 100mV
  • Low level output voltage Max.: 100mV
  • Total Power Dissipation: 1W
  • Oscillator frequency Max.: 106kHz
  • Rise Time Max. : 150ns
  • Fall Time Max.: 100ns
  • Integrated 600V half-bridge gate driver
  • 15.6V zener clamp on Vcc • True micropower start up
  • Tighter initial deadtime control
  • Low temperature coefficient deadtime
  • Shutdown feature (1/6th Vcc) on CT pin
  • Increased undervoltage lockout Hysteresis (1V)
  • Lower power level-shifting circuit
  • Constant LO, HO pulse widths at startup
  • Lower di/dt gate driver for better noise immunity
  • Low side output in phase with RT
  • Internal 50nsec (typ.) bootstrap diode (IR2153D)
  • Excellent latch immunity on all inputs and outputs
  • ESD protection on all leads
  • Also available LEAD-FREE
  • Package: DIP-8

IR2155 Self-Oscillating Half-Bridge Driver IC

  • Self-Oscillating Half-Bridge Driver
  • High Side Floating Supply Voltage Max.: 625V
  • Supply current Max.: 5mA
  • Clamp Voltage Max.: 16.8V
  • High level output voltage Max.: 100mV
  • Low level output voltage Max.: 100mV
  • Total Power Dissipation: 1W
  • Oscillator frequency Max.: 106kHz
  • Rise Time Max.: 120ns
  • Fall Time Max.: 70ns
  • Package: DIP-8

IRF3205 N-Channel Power Mosfet Transistor 55V 98A

Original price was: ₹42.00.Current price is: ₹35.00. inc. GST
N-Channel Power Mosfet Drain Current: ID= 98A at TC= 25℃ Drain Source Voltage: VDS = 55V Static Drain-Source On-Resistance:  RDS(on) =8mΩ Power

IRF3415 N-Channel Power Mosfet Transistor 150V 43A

Original price was: ₹60.00.Current price is: ₹55.00. inc. GST
FEATURES: N-Channel Power Mosfet Dynamic dv/dt Rating 1750C Operating Temperature Fast Switching SPECIFICATIONS: Drain Current: ID= 43A at TC=25℃ Drain

IRF3710 N-Channel Power Mosfet Transistor 100V 57A

Original price was: ₹50.00.Current price is: ₹40.00. inc. GST
  • N-Channel Power Mosfet
  • Drain Current: ID= 57A at TC= 25℃
  • Drain Source Voltage:VDS = 100V
  • Static Drain-Source On-Resistance:  RDS(on)=23mΩ
  • Power Dissipation: 200W
  • Package: TO-220AB

IRF530 N-Channel Power Mosfet Transistor 100V 14A

Original price was: ₹40.00.Current price is: ₹30.00. inc. GST
  • Type Designator: IRF530
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 90 W
  • Maximum Drain-Source Voltage |Vds|: 100 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 16 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 26 nC
  • Drain-Source Capacitance (Cd): 900 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
  • Package: TO220

IRF540N Power Mosfet Transistor 100V 33A

Original price was: ₹45.00.Current price is: ₹30.00. inc. GST
  • Drain Current: ID = 33A at TC = 250C and VGS = 10V
  • Gate-to-Source Voltage: VGS = ± 20 V
  • Static Drain-to-Source On-Resistance: RDS(on) = 44 mΩ
  • VDSS: 100V
  • Package: TO-220AB
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free

IRF620 N-Channel Power Mosfet Transistor 200V 5.2A

Original price was: ₹35.00.Current price is: ₹30.00. inc. GST
  • N-Channel Power Mosfet
  • Low RDS(ON)
  • Low Drive Requirements
  • Ease of Paralleling
  • Drain Current: ID= 5.2A at TC= 25℃
  • Drain Source Voltage: VDS = 200V
  • Static Drain-Source On-Resistance:  RDS(on) =0.8 Ω
  • Power Dissipation: 50W
  • Package: TO-220AB
 

IRF630 N-Channel Power Mosfet Transistor 200V 9A

Original price was: ₹27.00.Current price is: ₹22.00. inc. GST
Very low intrinsic capacitances SPECIFICATIONS: Drain-source Voltage: VDSS (VGS = 0) = 200V Gate- source Voltage: VGS = ± 20 V Drain Current: